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PD - 95504
IRFI9610GPBF
l l l l l l l
Isolated Package High Voltage Isolation=2.5KVRMS Sink to Lead Creepage Dist.=4.8mm P-Channel Dynamic dv/dt Rating Low thermal Resistance Lead-Free
HEXFET(R) Power MOSFET
D
VDSS = -200V RDS(on) = 3.0
G
ID = -2.0A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercialindustrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-2.0 -1.3 -8.0 27 0.22 20 100 -2.0 2.7 -11 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.

Max.
4.6 65
Units
C/W
07/06/04
IRFI9610GPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -200 -2.0 0.7 Typ. -0.22 12 17 19 15 Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 3.0 VGS = -10V, I D = -1.2A -4.0 V VDS = VGS, ID = -250A S VDS = -50V, ID = -1.2A -100 VDS = -200V, VGS = 0V A -500 VDS = -160V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 13 ID = -2.0A 3.2 nC VDS = -160V 7.3 VGS = -10V, See Fig. 6 and 13 VDD = -100V ID = -2.0A ns RG = 24 VGS = -10V, See Fig. 10 D Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of die contact S 180 VGS = 0V 66 pF VDS = -25V 12 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD t rr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol -2.0 showing the A G integral reverse -8.0 p-n junction diode. S -5.8 V TJ = 25C, I S = -2.0A, VGS = 0V 130 200 ns TJ = 25C, IF = -2.0A 700 1050 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by Starting TJ = 25C, L = 51mH
max. junction temperature. ( See fig. 11 )
ISD -2.0A, di/dt -250A/s, VDD V(BR)DSS,
TJ 150C
RG = 25, I AS = -2.0A. (See Figure 12)
Pulse width 300s; duty cycle 2%. t =60s, f=60Hz.
IRFI9610GPBF
10
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
10
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
1
1
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
-4.5V
0.1
-4.5V
0.1
0.01 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
20s PULSE WIDTH Tj = 150C
0.01 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, TJ = 150oC
10
2.5
TJ = 25C
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current ()
ID = -2.0A VGS = -10V
2.0
T J = 150C
1
(Normalized)
1.5
1.0
0 4.0 5.0 6.0 7.0
VDS = -50V 20s PULSE WIDTH
8.0 9.0 10.0 11.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI9610GPBF
400 350 300 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd
20
SHORTED
ID= -2.0A
-V GS, Gate-to-Source Voltage (V)
16
C, Capacitance (pF)
VDS= -160V VDS= -100V VDS= -40V
250 200 150
12
Ciss
8
Coss
100 50 0 1 10 100
4
FOR TEST CIRCUIT SEE FIGURE 13
Crss
0 0 2 4 6 8 10 12 14 Q G Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10.0
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
-I SD, Reverse Drain Current (A)
T J = 150C
-I D, Drain-to-Source Current (A)
10
1.0 TJ = 25C
100sec 1 1msec Tc = 25C Tj = 150C Single Pulse 10 100 -VDS , Drain-toSource Voltage (V) 10msec
VGS = 0V 0.1 0.0 1.0 2.0 3.0 4.0 5.0 -VSD, Source-toDrain Voltage (V)
0.1
1000
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI9610GPBF
2.0
VDS
1.6
RD
VGS RG
D.U.T.
+
-ID , Drain Current (A)
1.2
-10V
0.8
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
0.4
td(on) tr t d(off) tf
0.0 25 50 75 100 125 150
VGS 10%
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.02
0.1
0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
V DD
IRFI9610GPBF
EAS, Single Pulse Avalanche Energy (mJ)
VDS
L
240
RG
D.U.T
IAS
200
VDD A DRIVER
ID -0.9A TOP -1.3A BOTTOM -2.0A
-20V
160
tp
0.01
120
15V
80
Fig 12a. Unclamped Inductive Test Circuit
40
0 25 50 75 100 125 150
I AS
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
QGS
QGD
D.U.T.
-
-10V
VDS
IRFI9610GPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ V DD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D= P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
IRFI9610GPBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE
IR F I840G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E COD E YE AR 9 = 1999 WE E K 24 L IN E K
Data and specifications subject to change without notice. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04

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